Calculations of the electronic structure of strained InAs quantum dots in InP
Identifieur interne : 00E024 ( Main/Repository ); précédent : 00E023; suivant : 00E025Calculations of the electronic structure of strained InAs quantum dots in InP
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Abstract
We have calculated the electronic structure of InAs quantum dots embedded in InP as a function of size, using strain dependent eight-band kp theory in the envelope function approximation. A realistic three-dimensional shape was used for the simulations and the piezoelectric polarization of the system was included. In order to avoid spurious solutions, an extra term was added to the Hamiltonian. Polarization dependent dipole matrix elements were calculated as well as the exciton binding energies. A comparison between measurements and calculated transition energies shows good agreement. © 2002 American Institute of Physics.
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A realistic three-dimensional shape was used for the simulations and the piezoelectric polarization of the system was included. In order to avoid spurious solutions, an extra term was added to the Hamiltonian. Polarization dependent dipole matrix elements were calculated as well as the exciton binding energies. 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